Pall Gaskleen® Purifiers Prevent Contamination in Dielectric Plasma Etch Processes
Pall Corporation is featuring the Gaskleen SIP purifier, designed for the removal
of metal carbonyls and moisture contamination in Carbon Monoxide (CO) process gas
streams used in critical plasma etch processes to remove dielectric layers. Carbon
monoxide has inherent molecular contamination that can consist of 1ppm concentrations
of both metal carbonyls (Fe(CO)5, Ni(CO)4) and moisture. In addition, CO and moisture
may react with the iron and nickel in stainless steel piping to form more volatile
metal carbonyls. Volatile metals and moisture can not be captured by gas filter
assemblies. The CO process gas carries these volatile metal carbonyls, along with
moisture, into the dielectric etch process chamber. This results in deposition of
the metals and moisture on the wafer. The Gaskleen CO purifier contains proprietary
AresKleen™ SIP medium upstream of Ultramet-L® filtration medium. AresKleen SIP medium
is constructed of a highly reactive metal dispersed on an inorganic support.
The SIP medium has performance-enabling properties, including removal of both metal
carbonyls and moisture by adsorptive mechanisms, also high capacities of both aforementioned
contaminants. Ultramet-L medium is constructed of 316L SS media that enables 9LRV
particulate retention of size 3nm and larger.
Independent laboratory testing performed by APCI show that Pall Gaskleen SIP purifier
consistently demonstrate removal of metal carbonyl (Fe(CO)5, Ni(CO)4) gaseous impurities
to less than 1 ppb levels from CO feedstock gas with much higher concentrations
of metal carbonyls than is found in semiconductor grade CO. The graph in the Figure
below depicts removal efficiency over purifier lifetime and shows that the Gaskleen
SIP purifier removes metal carbonyl gaseous impurities from CO gas to less than
1 ppb levels and that it has a large capacity for metal carbonyls.
Call 1.925.443.9800 for more information.
CMP Point of Use Chemical Dilution
Semiconductor manufacturing customers are seeking ways to reduce process costs without
impacting the process itself. Semiconductor production facilities have numerous
Chemical Mechanical Planarization (CMP) tools that use an abrasive process for polishing
the surface of the wafer flat. Planarization areas are opportunities to pursue such
improvements.
At various times during the CMP process, fluids are delivered to the wafer for polishing
or rinsing using a pressurized chemical system. During the rinse phase a chemical,
usually acid or ammonia, is diluted 40:1 with de-ionized (DI) water. McMillan Liquid
Flo-Controllers combine smart electronics with a precision control valve and flow
sensor. The output from the flow sensor is analyzed and compared to the flow rate
set point. The control valve is then automatically adjusted to achieve the required
flow.
The DI water and the chemical are mixed downstream of the Model U801 Flo-Controllers
and delivered to the wafer. The controller uses an external set-point, output signal
and standby mode for process control and monitoring. Standby mode overrides control
functions and freezes valve position, while still providing flow output signals
for monitoring purposes. Normal operation resumes when standby is disengaged.
The Liquid Flo-Controllers provide consistent flow regardless of small pressure
changes and can be configured for available system pressure. The control module
has an LCD display, status and standby LED indicators for visual reference. DIP
switches on the control module allow the user to view flow, choose internal or external
set-point and manually activate standby mode. Benefits to our customers include
a reduction in process cost, reduced maintenance and improved consistency.
Call 1.925.443-9800 for more information or to schedule a visit with a Microelectronics
sales representative.
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Download this Issue: OCTOBER
2007
Saint-Gobain Microelectronics manufactures custom fluoropolymer valve manifolds
to provide turn-key solutions to semiconductor OEMs.
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